Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT Discrete, Toshiba IGBT discrete components and modules, Toshiba insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.90901+$37.627210+$35.4683100+$33.8645250+$33.6178500+$33.37101000+$33.09352500+$32.84675000+$32.6925 -
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Category: Bipolar transistorDescription: Smart power solutions for car body applications27235+$13.731150+$13.1443200+$12.8157500+$12.73361000+$12.65142500+$12.55755000+$12.49887500+$12.4402 -
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Category: Bipolar transistorDescription: STMICROELECTRONICS 2ST2121 Single transistor bipolar, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE60065+$14.139550+$13.5352200+$13.1968500+$13.11221000+$13.02762500+$12.93105000+$12.87057500+$12.8101 -
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Category: TVSdiodeDescription: Rectifier 30A 200V76025+$12.677050+$12.1352200+$11.8318500+$11.75601000+$11.68012500+$11.59355000+$11.53937500+$11.4851 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 50A 40000mW 3Pin(3+Tab) TO-3PFM Tube13085+$28.087050+$26.8867200+$26.2146500+$26.04651000+$25.87852500+$25.68645000+$25.56647500+$25.4464 -
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Category: TRIACsDescription: LITTELFUSE Q6035P5 Three terminal bidirectional thyristor switch47491+$83.455510+$79.8270100+$79.1739250+$78.6659500+$77.86761000+$77.50482500+$76.99685000+$76.5614 -
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Category: Bipolar transistorDescription: STMICROELECTRONICS MJ802 Single transistor bipolar, NPN, 90 V, 2 MHz, 200 W, 30 A, 100 hFE92431+$42.833010+$40.3754100+$38.5497250+$38.2688500+$37.98791000+$37.67202500+$37.39115000+$37.2155 -
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Category: Bipolar transistorDescription: NPN Darlington Power14815+$12.507350+$11.9728200+$11.6735500+$11.59871000+$11.52382500+$11.43835000+$11.38497500+$11.3314 -
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Category: Bipolar transistorDescription: MULTICOMP MJ3001 Single transistor bipolar, Darlington, NPN, 80 V, 150 W, 10 A, 1000 hFE13355+$11.971450+$11.4598200+$11.1733500+$11.10171000+$11.03012500+$10.94825000+$10.89717500+$10.8459 -
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Category: Bipolar transistorDescription: MULTICOMP MJ15025 Bipolar (BJT) Single Transistor, PNP, 250V, 4MHz, 250W, -16A, 15 hFE3419 -
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Category: Bipolar transistorDescription: High? Is the current complementary silicon power transistor high? Current Complementary Silicon Power Transistors3043 -
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Category: Bipolar transistorDescription: TO-3PL NPN 450V 15A19121+$299.287510+$291.480050+$285.4943100+$283.4123200+$281.8508500+$279.76881000+$278.46752000+$277.1663 -
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Category: Bipolar transistorDescription: TO-3PN NPN 800V 5A92291+$243.682710+$237.325850+$232.4521100+$230.7569200+$229.4855500+$227.79041000+$226.73092000+$225.6714 -
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Category: MOSpipeDescription: MOSFET DTMOS IV Series, Toshiba # # MOSFET transistor, Toshiba14475+$25.297750+$24.2166200+$23.6112500+$23.45991000+$23.30852500+$23.13555000+$23.02747500+$22.9193 -
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Category: TRIACsDescription: Triac 400V 16A To-3pF61845+$19.296850+$18.4722200+$18.0104500+$17.89491000+$17.77952500+$17.64755000+$17.56507500+$17.4826 -
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Category: Bipolar transistorDescription: TO-3PL NPN 160V 18A23125+$30.355750+$29.0584200+$28.3319500+$28.15031000+$27.96872500+$27.76125000+$27.63147500+$27.5017 -
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Category: Power diodeDescription: Rectifiers RECTIFIERS60441+$457.336610+$445.406150+$436.2593100+$433.0779200+$430.6918500+$427.51031000+$425.52192000+$423.5335 -
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Category: Power diodeDescription: Rectifier Array 200V 50A To-380251+$799.021410+$770.985650+$767.4811100+$763.9766150+$758.3695250+$753.4632500+$748.55691000+$742.9498 -
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Category: Bipolar transistorDescription: High voltage fast switching NPN power transistors14531+$41.509310+$39.1276100+$37.3584250+$37.0862500+$36.81401000+$36.50782500+$36.23565000+$36.0654 -
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Category: Schottky diodeDescription: TMBS - Trench MOS Barrier Schottky rectifier, 30A to 80A, Vishay Semiconductor's Trench MOS Barrier Schottky (TMBS) rectifier series includes patented Trench structures. Compared with planar Schottky rectifiers, TMBS rectifiers can provide multiple advantages. When the working voltage is 45V or higher, the planar Schottky rectifier loses its advantage of fast conversion speed and the low forward voltage drop reaches an extreme level. The patented TMBS structure solves these problems by reducing the injection of carriers into the drift region to the greatest extent possible, thereby minimizing the accumulation of charges and improving conversion speed. The patented Trench structure improves the efficiency of AC/DC switch mode power supplies and DC/DC converters with high power density and low forward voltage. Features: Schottky rectifier, Vishay Semiconductor81665+$28.230950+$27.0245200+$26.3489500+$26.18001000+$26.01112500+$25.81805000+$25.69747500+$25.5767 -
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Category: Bipolar transistorDescription: TO-3PN PNP 230V 15A57131+$49.372210+$46.5394100+$44.4350250+$44.1112500+$43.78751000+$43.42322500+$43.09955000+$42.8971 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 39A 200000mW 3Pin(3+Tab) TO-3PN7229 -
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Category: Discrete DeviceDescription: TO-3PBL NPN 600V 40A39391+$74.613210+$71.3691100+$70.7852250+$70.3310500+$69.61731000+$69.29292500+$68.83875000+$68.4495
